Physics, Technology, and Silicon Doping Methods for Active Semiconductor
DOI:
https://doi.org/10.70208/3007.8245.v6.n1.338Keywords:
silicon doping, semiconductors, ion implantation, carrier transport, microelectronicsAbstract
Silicon doping is one of the fundamental procedures in semiconductor engineering. Through this process, the electrical properties of the pure crystal are modified by introducing controlled atoms of impurity (dopants), which allow the transformation of an initially insulating material into a selective conductor with majority charge carriers. This treatise develops in scientific depth the quantum-electronic principles, the doping methods (diffusion, ion implantation, doped epitaxy), the fundamental equations of carrier transport, the physical models of equilibrium and non-equilibrium, and the technologies used in the industrial manufacture of active devices (diodes, bipolar transistors and MOSFETs). The text combines theoretical formulations, laboratory processes, industrial techniques, and physical justifications, with emphasis on physical consistency, industrial relevance, and device-level implications.
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